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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2565 DESCRIPTION With MT-200 package Complement to type 2SA1095 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25C) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage INC Collector-emitter voltage E SEM ANG H Open base Open emitter OND IC CONDITIONS TOR UC VALUE 160 160 5 15 1.5 UNIT V V V A A W ae ae Emitter-base voltage Open collector Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25ae 150 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A; IB=0.5 A IC=5A ; VCE=5V VCB=160V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=10V 55 40 MIN 160 5 TYP. 2SC2565 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V V 2.0 2.0 50 50 240 |I |I V V A A O Output capacitance Y hFE-1 classifications R 55-110 CHA IN 80-160 E SEM NG IE=0; VCB=10V;f=1MHz OND IC TOR UC 80 200 MHz pF 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2565 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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